Key Features
- Fully automated control panel plus 100 programmable process routes
- Process up to 300mm ø semiconductor wafers for IC or MEMS production
- Joystick operation with scroll through menu operation
- Easy wafer carrier load & unload mechanism
Description
The 300mm (12") diameter capacity CDP Chemical Mechanical Polishing System is the largest unit in the Logitech CDP range and is ideal for CMP applications where high precision results are required to nanometer levels. The 1CD91 will provide accurate, repeatable results with the majority of materials used in current day device fabrication up to a maximum diameter of 300mm (12").
Used as a test machine for replicating production conditions, the CDP 300 is the ideal solution when seeking to test new Chemical Mechancial Polishing slurries, pads and templates for ofline analysis without having to stop production runs.
The programmable control panel can store up to 64 separate material process routes, allowing automated, repeatable planarizing and delayering of wafers and components up to a maximum of 300mm (12") diameter to be carried out.
Operation
As with all CDP units, the CDP 300 can be used with both acid and alkaline slurries and has been built in a self contained chemical resistant, floor standing cabinet. The process area consists of a 950mm (37.4") diameter polishing plate, wafer die carrier and independent conditioner head.
The main process parameters of plate speed, carrier speed, carrier down pressure, back pressure, slurry flow rate and plate temperature can be defined and stored as part of the process route program. Upon starting the CDP 300 the control panel will require that each process variable is entered using the joystick. Once the required option has bee entered, it is saved by clicking the selection button on top of the stick. These process routes can then be renamed according to the material being processed.
The CDP 300 polishing plate and wafer / component carrier are capable of speeds up to 160rpm in either a clockwise or counter clockwise direction. The conditioner head is set in a circular holding arm while direction parameters for both the plate and carrier can be defined and stored as part of the process route setup.
Once the wafer / component has been attached to the carrier, the desired level of load can be set using the easily operated joystick controls. Back pressure can be applied to the wafer in a similar manner with a maximum setting of 36psi, helping ensure an even rate of polish over the face of the wafer.
The CDP 300 also has an End Point Detection system that makes use of custom designed software to allow real time monitoring of the polishing operation without any measurement downtime.
Applications
The CDP 300 can be used as a test unit for refining production runs in 300mm Fabrication Houses or alternatively as a research unit for those seeking to work with large diameter wafers or components.
Industry standards of control and layer removal for traditional CMOS technology and chemical mechanical polishing applications such as STI and Damascene (acceptable WTWNU and WIDNU are achievable) are all achievable using the CDP300. Additionally, hard materials can be planarized for EPI ready surface preparation or wafer reclamation. Laser quality surfaces (0/0 scratch dig), improvements to surface topography and Ra to subnanometer levels can all be achieved using the CDP 300.
Product Specification
| Power Supply : | 220V/240V, 50Hz (3 phase plus neutral) |
| Plate Speed : | 0-160rpm |
| Wafer Carrier Speed : | 0-160rpm |
| Wafer Back Pressure : | 0-50psi |
| Carrier Down Pressure : | 1-9psi |
| Plate Size : | 950mm (37.4") |
| Max Plate Temperature : | 60°C (140°F) |
| Slurry Flow Rate : | 20-500mls/min |
| Polishing Pad Flatness : | +/- 10µm |
| Timer : | 0-10 hours |
| Recipe Storage : | 100 recipes |
| Height : | 2190mm |
| Depth : | 1450mm |
| Width : | 1280mm |
For more information on the CDP300 Chemical Mechanical Polishing system, call us on +44 (0)1389 875444 or complete our contact form.